Datasheet

2001-2012 Microchip Technology Inc. DS21450D-page 3
TC650/TC651
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage (V
DD
to GND) ...................................+6V
Output Voltage (OUT to GND) .................................6V
Voltage On Any Pin....... (GND – 0.3V) to (V
DD
+ 0.3V)
Operating Temperature Range ......... –40C to +125C
Storage Temperature ........................ –65C to +150C
Notice: Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other conditions above those indicated
in the operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, V
DD
= 2.8V to 5.5V, SHDN = V
DD
, T
A
= –40C to +125C.
Parameters Sym Min Typ Max Units Conditions
Supply Voltage V
DD
2.8 5.5 V
Supply Current I
DD
—5090µAPWM, T
OVER
are open
SHDN
Input
SHDN
Input High Threshold V
IH
65 %V
DD
SHDN Input Low Threshold V
IL
——15%V
DD
PWM Output
PWM Output Low Voltage V
OL
0.3 V I
SINK
= 1 mA
PWM Output High Voltage V
OH
V
DD
– 0.5 V I
SOURCE
= 5 mA
PWM Rise Time t
R
—10 µsI
OH
= 5 mA, 1 nF from
PWM to GND
PWM Fall Time t
F
—10 µsI
OL
= 1 mA, 1 nF from
PWM to GND
PWM Frequency f
OUT
10 15 Hz
Start-up Time t
STARTUP
— 32/f
OUT
—secV
DD
Rises from GND
or SHDN
Released
Temperature Accuracy
High Temperature Accuracy T
H ACC
T
H
– 3 T
H
T
H
+ 3 °C Note 1
Temperature Range Accuracy (T
H –
T
L
)
ACC
–1.0 +1.0 °C (T
H
– T
L
) 20C
–2.5 +2.5 °C (T
H
– T
L
) 20C
Auto-shutdown Hysteresis T
HYST
—(T
H
-T
L
)/5 °C TC651 Only
T
OVER
Output
T
OVER
Output High Voltage V
HIGH
V
DD
– 0.5 V I
SOURCE
= 1.2 mA
T
OVER
Output Low Voltage V
LOW
0.4 V I
SINK
= 2.5 mA
Absolute Accuracy T
OVER ACC
—T
H
+ 10 °C At Trip Point
Trip Point Hysteresis T
OVER HYST
—5°C
Note 1: Transition from 90% to 100% Duty Cycle.