Datasheet

TC646B/TC648B/TC649B
DS21755C-page 4  2002-2013 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Pulse-Width Modulator
PWM Frequency f
PWM
26 30 34 Hz C
F
= 1.0 µF
SENSE Input (TC646B & TC649B)
SENSE Input Threshold Voltage
with Respect to GND
V
TH(SENSE)
50 70 90 mV
Blanking time to ignore pulse due
to V
OUT
turn-on
t
BLANK
— 3.0 — µsec
FAULT
/ OTF Output
Output Low Voltage V
OL
—— 0.3VI
OL
= 2.5 mA
Missing Pulse Detector Timer t
MP
— 32/f — sec TC646B and TC649B, Note 2
Start-up Timer t
STARTUP
— 32/f — sec Note 2
Diagnostic Timer t
DIAG
— 3/f — sec TC646B and TC649B
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < T
A
< +85°C, V
DD
= 3.0V to 5.5V.
Parameters Sym Min Typ Max Units Conditions
Note 1: Ensured by design, tested during characterization.
2: For V
DD
< 3.7V, t
STARTUP
and t
MP
timers are typically 13/f.
Electrical Characteristics: Unless otherwise noted, all parameters apply at V
DD
= 3.0V to 5.5V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +85 °C
Operating Temperature Range T
A
-40 — +125 °C
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Package Resistance, 8-Pin MSOP 
JA
— 200 — °C/W
Thermal Package Resistance, 8-Pin SOIC 
JA
— 155 — °C/W
Thermal Package Resistance, 8-Pin PDIP 
JA
— 125 — °C/W