Datasheet

 2002-2013 Microchip Technology Inc. DS21755C-page 3
TC646B/TC648B/TC649B
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage (V
DD
) .......................................................6.0V
Input Voltage, Any Pin................(GND - 0.3V) to (V
DD
+0.3V)
Operating Temperature Range ....................- 40°C to +125°C
Maximum Junction Temperature, T
J
...........................+150°C
ESD Protection on all pins ........................................... > 3 kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
PIN FUNCTION TABLE
Name Function
V
IN
Analog Input
C
F
Analog Output
V
AS
Analog Input
GND Ground
SENSE/NC Analog Input.
No Connect (NC) for TC648B
FAULT/OTF Digital (Open-Drain) Output
OTF
for TC648B
V
OUT
Digital Output
V
DD
Power Supply Input
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < T
A
< +85°C, V
DD
= 3.0V to 5.5V.
Parameters Sym Min Typ Max Units Conditions
Supply Voltage V
DD
3.0 — 5.5 V
Supply Current, Operating I
DD
— 200 400 µA Pins 6, 7 Open,
C
F
= 1 µF, V
IN
= V
C(MAX)
Supply Current, Shutdown Mode I
DD(SHDN)
— 30 — µA Pins 6, 7 Open,
C
F
= 1 µF, V
IN
= 0.35V
V
OUT
Output
Sink Current at V
OUT
Output I
OL
1.0 — — mA V
OL
= 10% of V
DD
Source Current at V
OUT
Output I
OH
5.0 — — mA V
OH
= 80% of V
DD
V
IN
, V
AS
Inputs
Input Voltage at V
IN
for 100% PWM
Duty Cycle
V
C(MAX)
2.45 2.60 2.75 V
Over-Temperature Indication
Threshold
V
OTF
V
C(MAX)
+
20 mV
V For TC646B and TC648B
Over-Temperature Indication
Threshold Hysteresis
V
OTF-HYS
80 mV For TC646B and TC648B
V
C(MAX)
- V
C(MIN)
V
C(SPAN)
1.3 1.4 1.5 V
Hysteresis on Auto-Shutdown
Comparator
V
HAS
—70—mV
Auto-Shutdown Threshold V
AS
V
C(MAX)
-
V
C(SPAN)
—V
C(MAX)
V
Voltage Applied to V
IN
to Ensure
Shutdown Mode
V
SHDN
—— V
DD
x 0.13 V
Voltage Applied to V
IN
to Release
Shutdown Mode
V
REL
V
DD
x 0.19 — — V V
DD
= 5V
Hysteresis on V
SHDN
, V
REL
V
HYST
— 0.03 X
V
DD
—V
V
IN
, V
AS
Input Leakage I
IN
- 1.0 — +1.0 µA Note 1
Note 1: Ensured by design, tested during characterization.
2: For V
DD
< 3.7V, t
STARTUP
and t
MP
timers are typically 13/f.