Datasheet

© 2008 Microchip Technology Inc. DS21949C-page 9
TC1303A/TC1303B/TC1303C/TC1304
Output Short Circuit Current
(Average)
I
OUTsc2
240 mA R
LOAD2
1
Wake-Up Time (From SHDN2
mode), (V
OUT2
)
t
WK
—31100µsI
OUT1
= I
OUT2
= 50 mA
Settling Time (From SHDN2
mode), (V
OUT2
)
t
S
100 µs I
OUT1
= I
OUT2
= 50 mA
Power-Good (PG)
Voltage Range PG V
PG
1.0
1.2
—5.5
5.5
VT
A
= 0°C to +70°C
T
A
= -40°C to +85°C
V
IN
2.7 I
SINK
= 100 µA
PG Threshold High
(V
OUT1
or V
OUT2
)
V
TH_H
—9496 % of
V
OUTX
On Rising V
OUT1
or V
OUT2
V
OUTX
=V
OUT1
or V
OUT2
PG Threshold Low
(V
OUT1
or V
OUT2
)
V
TH_L
89 92 % of
V
OUTX
On Falling V
OUT1
or V
OUT2
V
OUTX
=V
OUT1
or V
OUT2
PG Threshold Hysteresis
(V
OUT1
and V
OUT2
)
V
TH_HYS
—2% of
V
OUTX
V
OUTX
=V
OUT1
or V
OUT2
PG Threshold Tempco ΔV
TH
/ΔT 30 ppm/°C
PG Delay t
RPD
165 µs V
OUT1
or V
OUT2
=(V
TH
+ 100 mV)
to (V
TH
- 100 mV)
PG Active Time-out Period t
RPU
140 262 560 ms V
OUT1
or V
OUT2
=V
TH
- 100 mV
to V
TH +
100 mV,
I
SINK
= 1.2 mA
PG Output Voltage Low PG_V
OL
——0.2 VV
OUT1
or V
OUT2
=V
TH
- 100 mV
,
I
PG
= 1.2 mA V
IN2
>2.7V
I
PG
= 100 µA, 1.0V < V
IN2
< 2.7V
PG Output Voltage High
(TC1303B only)
PG_V
OH
0.9* V
OUT2
—— VV
OUT1
or V
OUT2
=V
TH
+ 100 mV
V
OUT2
1.8V, I
PG
= - 500 µA
V
OUT2
< 1.8V,I
PG
= - 300 µA
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: V
IN1
=V
IN2
= SHDN1,2 = 3.6V, C
OUT1
=C
IN
= 4.7 µF, C
OUT2
=1µF, L
= 4.7 µH, V
OUT1
(ADJ) = 1.8V,
I
OUT1
= 100 mA, I
OUT2
= 0.1 mA T
A
= +25°C. Boldface specifications apply over the T
A
range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The Minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
RX
+ V
DROPOUT,
V
RX
= V
R1
or V
R2
.
2: V
RX
is the regulator output voltage setting.
3: TCV
OUT2
= ((V
OUT2max
– V
OUT2min
) * 10
6
)/(V
OUT2
* D
T
).
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
A
, T
J
, θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
, and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V
IN1
and V
IN2
are supplied by the same input source.