Datasheet

© 2008 Microchip Technology Inc. DS21949C-page 7
TC1303A/TC1303B/TC1303C/TC1304
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
- A
GND
.......................................................................6.0V
All Other I/O ...............................(A
GND
- 0.3V) to (V
IN
+ 0.3V)
L
X
to P
GND
...............................................-0.3V to (V
IN
+ 0.3V)
P
GND
to A
GND
.................................................. -0.3V to +0.3V
Output Short Circuit Current ................................ Continuous
Power Dissipation (Note 7) ..........................Internally Limited
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied ................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM) ....................................... 3kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: V
IN1
=V
IN2
= SHDN1,2 = 3.6V, C
OUT1
=C
IN
= 4.7 µF, C
OUT2
=1µF, L = 4.7 µH, V
OUT1
(ADJ) = 1.8V,
I
OUT1
= 100 mA, I
OUT2
= 0.1 mA T
A
= +25°C. Boldface specifications apply over the T
A
range of -40°C to +85°C.
Parameters Sym Min Typ Max Units Conditions
Input/Output Characteristics
Input Voltage V
IN
2.7 — 5.5 V Note 1, Note 2, Note 8
Maximum Output Current I
OUT1_MAX
500 —— mANote 1
Maximum Output Current I
OUT2_MAX
300 —— mANote 1
Shutdown Current
Combined V
IN1
and V
IN2
Current
I
IN_SHDN
— 0.05 1 µA SHDN1 =SHDN2=GND
TC1303A,B Operating I
Q
TC1303C, TC1304 Operating I
Q
I
Q
I
Q
— 65.0
70.1
110
110
µA SHDN1 =SHDN2=V
IN2
I
OUT1
=0mA, I
OUT2
=0mA
Synchronous Buck I
Q
— 38 — µA SHDN1 = V
IN
, SHDN2 = GND
LDO I
Q
— 46 — µA SHDN1 = GND, SHDN2 = V
IN2
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN
1,SHDN2, SHDN (TC1304)
Logic Input Voltage Low
V
IL
——15 %V
IN
V
IN1
=V
IN2
= 2.7V to 5.5V
SHDN1,SHDN2, SHDN (TC1304)
Logic Input Voltage High
V
IH
45 ——%V
IN
V
IN1
=V
IN2
= 2.7V to 5.5V
SHDN1,SHDN2, SHDN (TC1304)
Input Leakage Current
I
IN
-1.0 ±0.01 1.0 µA V
IN1
=V
IN2
= 2.7V to 5.5V
SHDNX
=GND
SHDNY
=V
IN
Thermal Shutdown T
SHD
— 165 — °C Note 6, Note 7
Thermal Shutdown Hysteresis T
SHD-HYS
—10— °C
Undervoltage Lockout
(V
OUT1
and V
OUT2
)
UVLO 2.4 2.55 2.7 VV
IN1
Falling
Undervoltage Lockout Hysteresis UVLO-
HYS
— 200 — mV
Note 1: The Minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
RX
+ V
DROPOUT,
V
RX
= V
R1
or V
R2
.
2: V
RX
is the regulator output voltage setting.
3: TCV
OUT2
= ((V
OUT2max
– V
OUT2min
) * 10
6
)/(V
OUT2
* D
T
).
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
A
, T
J
, θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
, and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V
IN1
and V
IN2
are supplied by the same input source.