Datasheet

TC1016
DS21666B-page 2 © 2005 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissipation................ Internally Limited (Note 7)
Operating Temperature .................-40°C < T
J
< 125°C
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........V
IN
+ 0.3V to -0.3V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static dis-
charge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional oper-
ation of the device at these or any other conditions above
those indicated in the operational sections of the
specifications is not implied. Exposure to Absolute Maximum
Rating Conditions for extended periods may affect device
reliability
ELECTRICAL CHARACTERISTICS
V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0µF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted. Boldface type specifications apply for
junction temperatures of – 40°C to +125°C.
Parameter Sym Min Typ Max Units Test Conditions
Input Operating Voltage V
IN
2.7 — 6.0 V Note 1
Maximum Output Current I
OUTMAX
80 ——mA
Output Voltage V
OUT
V
R
– 2.5% V
R
±0.5% V
R
+ 2.5% V Note 2
V
OUT
Temperature Coefficient TCV
OUT
— 40 — ppm/°C Note 3
Line Regulation (ΔV
OUT
/ΔV
IN
)/V
R
—0.010.2 %/V (V
R
+ 1V) < V
IN
< 6V
Load Regulation (Note 4) ΔV
OUT
/V
R
—0.23 1 %I
L
= 0.1 mA to I
OUTMAX
Dropout Voltage (Note 5)V
IN
– V
OUT
—
—
—
2
100
150
—
200
300
mV I
L
= 100 µA
I
L
= 50 mA
I
L
= 80 mA
Supply Current I
IN
—5390 µA SHDN = V
IH
, I
L
= 0
Shutdown Supply Current I
INSD
— 0.05 0.5 µA SHDN = 0V
Power Supply Rejection Ratio PSRR — 58 — dB f =1 kHz, I
L
= 50 mA
Wake-Up Time
(from Shutdown mode)
t
WK
—10—µsV
IN
= 5V, I
L
= 60 mA,
C
IN
= 1 µF, C
OUT
= 1 µF,
f = 100 Hz
Settling Time
(from Shutdown Mode)
t
S
—32—µsV
IN
= 5V, I
L
= 60 mA,C
IN
=
1µF, C
OUT
= 1 µF, f =
100 Hz
Output Short Circuit Current I
OUTSC
— 120 — mA V
OUT
= 0V
Thermal Regulation V
OUT
/P
D
—0.04—V/WNotes 6, 7
Thermal Shutdown Die
Temperature
T
SD
— 160 — °C
Thermal Shutdown Hysteresis ΔT
SD
—10—°C
Output Noise eN — 800 — nV/√Hz f = 10 kHz
SHDN
Input High Threshold V
IH
60 ——%V
IN
V
IN
= 2.7V to 6.0V
SHDN
Input Low Threshold V
IL
——15 %V
IN
V
IN
= 2.7V to 6.0V
Note 1: The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ (V
R
+ 2.5%)+V
DROPOUT
.
2: V
R
is the regulator voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 3.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at V
IN
= 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. T
A
, T
J
, θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
TCV
OUT
V
OUTMAX
V
OUTMIN
–()10
6
×
V
OUT
TΔ×
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