Datasheet

© 2007 Microchip Technology Inc. DS21335E-page 7
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-17: Measure Rise Time of 3.3V
with Bypass Capacitor.
FIGURE 2-18: Measure Fall Time of 3.3V
with Bypass Capacitor.
FIGURE 2-19: Measure Rise Time of 3.3V
without Bypass Capacitor.
FIGURE 2-20: Measure Fall Time of 3.3V
without Bypass Capacitor.
V
SHDN
V
OUT
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25°C, Rise Time = 448μS
V
SHDN
V
OUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 4.3V, Temp = 25°C, Fall Time = 100μS
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25°C, Rise Time = 184μS
V
SHDN
V
OUT
V
OUT
V
SHDN
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1μF, C
OUT
= 1μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25°C, Fall Time = 52μS