Datasheet

TC1014/TC1015/TC1185
DS21335E-page 2 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Device Test Conditions
Input Operating Voltage
V
IN
2.7 — 6.0 V—Note 1
Maximum Output Current
I
OUTMAX
50
100
150
—
—
—
—
—
—
mA TC1014
TC1015
TC1185
Output Voltage
V
OUT
V
R
– 2.5% V
R
±0.5% V
R
+ 2.5% V—Note 2
V
OUT
Temperature Coefficient
TCV
OUT
—
—
20
40
—
—
ppm/°C — Note 3
Line Regulation
ΔV
OUT
/
ΔV
IN
—0.050c.35 %—(V
R
+ 1V) ≤ V
IN
≤ 6V
Load Regulation
ΔV
OUT
/
V
OUT
—
—
0.5
0.5
2
3
% TC1014; TC1015
TC1185
I
L
= 0.1 mA to I
OUTMAX
I
L
= 0.1 mA to I
OUTMAX
(Note 4)
Dropout Voltage
V
IN
-V
OUT
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV —
—
—
TC1015; TC1185
TC1185
I
L
= 100 µA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA (Note 5)
Supply Current (Note 8)
I
IN
—5080 µA — SHDN = V
IH
, I
L
= 0
Shutdown Supply Current
I
INSD
— 0.05 0.5 µA — SHDN = 0V
Power Supply Rejection
Ratio
PSRR
—64—dB —F
RE
≤ 1kHz
Output Short Circuit Current
I
OUTSC
—300450mA —V
OUT
= 0V
Thermal Regulation
ΔV
OUT
/
ΔP
D
—0.04—V/W —Notes 6, 7
Thermal Shutdown Die
Temperature
T
SD
—160—°C —
Thermal Shutdown
Hysteresis
ΔT
SD
—10—°C —
Note 1: The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
R
+ V
DROPOUT
.
2: V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
, θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
TC V
OUT
= (V
OUTMAX
– V
OUTMIN
)x 10
6
V
OUT
x ΔT