Datasheet
©2011 Silicon Storage Technology, Inc. DS25029A 06/11
31
16 Mbit LPC Serial Flash
SST49LF016C
Data Sheet
A
Microchip Technology Company
DC Characteristics
Table 22:DC Operating Characteristics at 33 MHz and 66 MHz (All Interfaces)
Symbo
l Parameter
Limits
Test ConditionsMin Max
Unit
s
I
DD
1
1. I
DD
active while a Read or Write (Program or Erase) operation is in progress.
Active V
DD
Current LCLK (LPC mode)=V
ILT
/V
IHT
All other inputs=V
IL
or V
IH
Read 18 mA All outputs = open, V
DD
=V
DD
Max
Single-/Dual-Byte Program, Erase 40 mA
Quad-Byte Program 60 mA
I
SB
Standby V
DD
Current
(LPC Interface)
100 µA LCLK (LPC mode)=V
ILT
/V
IHT
at
LFRAME#=.9V
DD
V
DD
=V
DD
Max
All other inputs 0.9 V
DD
or 0.1 V
DD
I
RY
2
2. The device is in Ready mode when no activity is on the LPC bus.
Ready Mode V
DD
Current 10 mA LCLK (LPC mode)=V
ILT
/V
IHT
LFRAME#=V
IL
,V
DD
=V
DD
Max
All other inputs 0.9 V
DD
or 0.1 V
DD
I
I
Input Leakage Current for ID[3:0]
pins
200 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
I
H
Supervoltage Current for WP#/AAI 200 µA
VH Supervoltage for WP#/AAI 8.5 9.5 V
V
IHI
3
3. Do not violate processor or chipset specification regarding INIT# voltage.
INIT# Input High Voltage 1.1 V
DD
+0.
5
VV
DD
=V
DD
Max
V
ILI
3
INIT# Input Low Voltage -0.5 0.4 V V
DD
=V
DD
Min
V
IL
Input Low Voltage -0.5 0.3 V
DD
VV
DD
=V
DD
Min
V
IH
Input High Voltage 0.5
V
DD
V
DD
+0.
5
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.1 V
DD
VI
OL
=1500 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage 0.9
V
DD
VI
OH
=-500 µA, V
DD
=V
DD
Min
T22.1 25029
Table 23:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Write Operation 100 µs
T23.0 25029