Information

SuperFlash® Memory Products
High Performance, Low Power Consumption and Superior Reliability
What is SuperFlash?
SuperFlash is an innovative, highly reliable and versatile
type of NOR Flash memory invented by Silicon Storage
Technology (SST). SuperFlash memory is much more
flexible and reliable than competing non-volatile memories.
This technology utilizes a split-gate cell architecture which
uses a robust thick-oxide process that requires fewer
mask steps resulting in a lower-cost nonvolatile memory
solution with excellent data retention and higher reliability.
SuperFlash Advantages
■ Fast, fixed program and erase times
• ~ 40 ms vs. more than a minute for 64 Mb
• Results in improved manufacturing efficiency
and lower costs
■ No pre-programming or verify required prior to erase
• Results in significantly lower power consumption
■ Superior reliability
• 100K cycles and 100 years data retention
■ Inherent small sector size
• 4KB erase sector vs. 64 KB
• Results in faster re-write operations and contributes
to lowering overall power consumption
Memory Cell Structure Comparison
Source
Th
icker tunnel
ox
ide reduces
leakage
improving dat
a
retention and
reliability.
Drain
Poly 2
Split Gate
SuperFlash
®
Poly 2
Poly 1
Source Drain
Stacked Gate
(Conventional Flash)
Poly 1
Time Is Money
Fast erase performance improves manufacturing efficiency and lowers product costs!
With stacked gate Flahs, extensive production testing can slow down the manufacturing flow, costing more money.
SuperFlash can lower test and/or programming costs by as much as $0.32 per unit*.
* Based on 64 seconds × US $0.005 per second = US $0.32 per unit. 64 seconds is the typical chip erase time for our competitors’ 64Mb device.
Our 64 Mb device maximum chip erase time is 50 ms.