Datasheet
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
15
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 15:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T15.2 25040
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Table 16:Read Cycle Timing Parameters V
DD
= 2.7-3.6V
Symbol Parameter
SST39VF168x-70
UnitsMin Max
T
RC
Read Cycle Time 70 ns
T
CE
Chip Enable Access Time 70 ns
T
AA
Address Access Time 70 ns
T
OE
Output Enable Access Time 35 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 20 ns
T
OHZ
1
OE# High to High-Z Output 20 ns
T
OH
1
Output Hold from Address Change 0 ns
T
RP
1
RST# Pulse Width 500 ns
T
RHR
1
RST# High before Read 50 ns
T
RY
1,2
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
RST# Pin Low to Read Mode 20 µs
T16.1 25040