Datasheet

©2011 Silicon Storage Technology, Inc. DS25028A 08/11
13
16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
Not Recommended for New Designs
A
Microchip Technology Company
Table 8: System Interface Information for SST39VF160x/320x
Address Data Data
1BH 0027H V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1CH 0036H V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1DH 0000H V
PP
min. (00H = no V
PP
pin)
1EH 0000H V
PP
max. (00H = no V
PP
pin)
1FH 0003H Typical time out for Word-Program 2
N
µs (2
3
= 8 µs)
20H 0000H Typical time out for min. size buffer program 2
N
µs (00H = not supported)
21H 0004H Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
=16ms)
22H 0005H Typical time out for Chip-Erase 2
N
ms (2
5
=32ms)
23H 0001H Maximum time out for Word-Program 2
N
times typical (2
1
x2
3
=16µs)
24H 0000H Maximum time out for buffer program 2
N
times typical
25H 0001H Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x2
4
=32
ms)
26H 0001H Maximum time out for Chip-Erase 2
N
times typical (2
1
x2
5
=64ms)
T8.3 25028
Table 9: Device Geometry Information for SST39VF1601/1602
Address Data Data
27H 0015H Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0000H Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
2BH 0000H
2CH 0002H Number of Erase Sector/Block sizes supported by device
2DH 00FFH Sector Information (y+1=Number of sectors; z x 256B = sector size)
2EH 0001H y = 511+1=512sectors (01FF = 511
2FH 0010H
30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
31H 001FH Block Information (y+1=Number of blocks; z x 256B = block size)
32H 0000H y = 31+1=32blocks(001F = 31)
33H 0000H
34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 25028