Datasheet

©2013 Silicon Storage Technology, Inc. DS25022B 04/13
12
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
Table 7: DC Operating Characteristics V
DD
= 4.5-5.5V
1
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT
, at f=1/T
RC
Min
V
DD
=V
DD
Max
Read
2
25 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
Program and Erase 35 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB1
Standby V
DD
Current
(TTL input)
3mACE#=V
IH
, V
DD
=V
DD
Max
I
SB2
Standby V
DD
Current
(CMOS input)
100 µA CE#=V
IHC
, V
DD
=V
DD
Max
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current 10 µA V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 2.0 V V
DD
=V
DD
Max
V
IHC
Input High Voltage (CMOS) V
DD
-0.3 V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.4 V I
OL
=2.1 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage 2.4 V I
OH
=-400 µA, V
DD
=V
DD
Min
T7.10 25022
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and V
DD
= 5V for SF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
Table 8: Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Program/Erase Operation 100 µs
T8.1 25022
Table 9: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance V
I/O
= 0V 12 pF
C
IN
1
Input Capacitance V
IN
= 0V 6 pF
T9.0 25022
Table 10: Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T10.2 25022