Datasheet
©2011 Silicon Storage Technology, Inc. DS25001A 03/11
16
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 15: Read Cycle Timing Parameters V
DD
= 3.0-3.6V
Symbol Parameter
SST39LF200A/400A/800A-
55
UnitsMin Max
T
RC
Read Cycle Time 55 ns
T
CE
Chip Enable Access Time 55 ns
T
AA
Address Access Time 55 ns
T
OE
Output Enable Access Time 30 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 15 ns
T
OHZ
1
OE# High to High-Z Output 15 ns
T
OH
1
Output Hold from Address Change 0 ns
T15.7 25001
Table 16: Read Cycle Timing Parameters V
DD
= 2.7-3.6V
Symbol Parameter
SST39VF200A/400A/800A-
70
Unit
sMin Max
T
RC
Read Cycle Time 70 ns
T
CE
Chip Enable Access Time 70 ns
T
AA
Address Access Time 70 ns
T
OE
Output Enable Access Time 35 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 20 ns
T
OHZ
1
OE# High to High-Z Output 20 ns
T
OH
1
Output Hold from Address Change 0 ns
T16.7 25001