Datasheet

©2011 Silicon Storage Technology, Inc. DS-25015A 04/11
35
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
A
Microchip Technology Company
Table 24:Program/Erase Cycle Timing Parameters
Symbol Parameter Min Max Units
T
BP
Word-Program Time 10 µs
T
WBP
1
Program Buffer-to-Flash Time 40 µs
T
AS
Address Setup Time 0 ns
T
AH
Address Hold Time 30 ns
T
CS
WE# and CE# Setup Time 0 ns
T
CH
WE# and CE# Hold Time 0 ns
T
OES
OE# High Setup Time 0 ns
T
OEH
OE# High Hold Time 10 ns
T
CP
CE# Pulse Width 40 ns
T
WP
WE# Pulse Width 40 ns
T
WPH
2
WE# Pulse Width High 30 ns
T
CPH
2
CE# Pulse Width High 30 ns
T
DS
Data Setup Time 30 ns
T
DH
2
Data Hold Time 0 ns
T
IDA
2
Software ID, Volatile Protect, Non-Volatile Protect, Global Lock Bit,
Password mode, Lock Bit, Bypass Entry, and Exit Times
150 ns
T
SE
Sector-Erase 25 ms
T
BE
Block-Erase 25 ms
T
SCE
Chip-Erase 50 ms
T
BUSY
CE# High or WE# High to RY / BY# Low 90 ns
T24.0 25015
1. Effective programming time is 2.5 µs per word if 16-words are programmed during this operation.
2. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.