Datasheet

©2011 Silicon Storage Technology, Inc. DS-25015A 04/11
34
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 23:Read Cycle Timing Parameters V
DD
= 2.7-3.6V
Symbol Parameter Min Max Units
T
RC
Read Cycle Time 90 ns
T
CE
Chip Enable Access Time 90 ns
T
AA
Address Access Time 90 ns
T
PACC
Page Access Time 25 ns
T
OE
Output Enable Access Time 25 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 20 ns
T
OHZ
1
OE# High to High-Z Output 20 ns
T
OH
1
Output Hold from Address Change 0 ns
T
RP
1
RST# Pulse Width 500 ns
T
RHR
1
RST# High before Read 50 ns
T
RYE
1,2
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
RST# Pin Low to Read Mode 20 µs
T
RY
1
RST# Pin Low to Read Mode – not during Program or Erase algorithms. 500 ns
T
RPD
1
RST# Input Low to Standby mode 20 µs
T
RB
1
RY / BY# Output high to CE# / OE# pin Low 0 ns
T23.0 25015