Datasheet

©2011 Silicon Storage Technology, Inc. DS-25015A 04/11
29
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
A
Microchip Technology Company
Table 14:System Interface Information for SST38VF6401/6402/6403/6404
Address Data Description
1BH 0027H V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1CH 0036H V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
1DH 0000H V
PP
min. (00H = no V
PP
pin)
1EH 0000H V
PP
max. (00H = no V
PP
pin)
1FH 0003H Typical time out for Word-Program 2
N
µs (2
3
= 8 µs)
20H 0003H Typical time out for min. size buffer program 2
N
µs (00H = not supported)
21H 0004H Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
=16ms)
22H 0005H Typical time out for Chip-Erase 2
N
ms (2
5
=32ms)
23H 0001H Maximum time out for Word-Program 2
N
times typical (2
1
x2
3
=16µs)
24H 0003H Maximum time out for buffer program 2
N
times typical
25H 0001H Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x2
4
=32ms)
26H 0001H Maximum time out for Chip-Erase 2
N
times typical (2
1
x2
5
=64ms)
T14.0 25015
Table 15:Device Geometry Information for SST38VF6401/6402/6403/6404
Address Data Description
27H 0017H Device size = 2
N
Bytes (17H = 23; 2
23
= 8 MByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0005H Maximum number of bytes in multi-byte write = 2
N
(00H = not supported)
2BH 0000H
2CH 0002H Number of Erase Sector/Block sizes supported by device
2DH 00FFH Sector Information (y+1=Number of sectors; z x 256B = sector size)
2EH 0003H y = 2047+1=2048 sectors (03FFH = 1023)
2FH 0000H
30H 0001H z = 32 x 256 Bytes = 8 KBytes/sector (0100H = 32)
31H 007FH Block Information (y+1=Number of blocks; z x 256B = block size)
32H 0000H y =127+1=128blocks(007FH = 127)
33H 0000H
34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T15.1 25015