Datasheet

©2011 Silicon Storage Technology, Inc. DS-25015A 04/11
14
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
A
Microchip Technology Company
RY/BY#
The RY/BY# pin can be used to determine the status of a Program or Erase operation. The RY/BY# pin
is valid after the rising edge of the final WE# pulse in the command sequence. If RY/BY# = 0, then the
device is actively programming or erasing. If RY/BY# = 1, the device is in Read mode. The RY/BY# pin
is an open drain output pin. This means several RY/BY# can be tied together with a pull-up resistor to
V
DD..
Data Protection
The SST38VF6401/6402/6403/6404 provide both hardware and software features to protect nonvolatile
data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than
5 ns will not initiate a write cycle.
V
DD
Power Up/Down Detection: The Write operation is inhibited when V
DD
is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This pre-
vents inadvertent writes during power-up or power-down.
Table 4: Write Operation Status
Status DQ
7
1
1. DQ
7
and DQ
2
require a valid address when reading status information.
DQ
6
DQ
2
1
DQ
1
RY/BY#
2
2. RY/BY# is an open drain pin. RY/BY# is high in Read mode, and Read in Erase-Suspend mode.
Normal
Operation
Standard Program DQ
7
# Toggle No Toggle 0 0
Standard Erase 0 Toggle Toggle N/A 0
Erase-Suspend Mode Read from Erase-Suspended
Sector/Block
1 No toggle Toggle N/A 1
Read from Non- Erase-
Suspended Sector/Block
Data Data Data Data 1
Program DQ
7
# Toggle N/A N/A 0
Program Buffer-to-Flash Busy DQ
7
#
3
3. During a Program Buffer-to-Flash operation, the datum on the DQ
7
pin is the complement of DQ
7
of the last word
loaded in the Write-Buffer using the Write-to-Buffer command.
Toggle N/A 0 0
Abort DQ
7
#
3
Toggle N/A 1 0
T4.0 25015