Datasheet

ManualsBrandsMICROCHIP TECHNOLOGY ManualsIntegrated Circuits (ICs)64 Bit 4 M x 16

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404

Data Sheet

Microchip Technology Company

If the Write-to-Buffer or Program Buffer-to-Flash operation aborts, then DQ

= 1 and the device enters

Write-Buffer-Abort mode. To execute another operation, a Write-to-Buffer Abort-Reset command must

be issued to clear DQ

and return the device to standard read mode.

After the Write-to-Buffer and Program Buffer-to-Flash commands are successfully issued, the pro-

gramming operation can be monitored using Data# Polling, Toggle Bits, and RY/BY#.

Sector/Block-Erase Operations

The Sector-Erase and Block-Erase operations allow the system to erase the device on a sector-by-

sector, or block-by-block, basis. The SST38VF6401/6402/6403/6404 offer both Sector-Erase and Block-

Erase modes.

The Sector-Erase architecture is based on a sector size of 4 KWords. The Sector-Erase command can

erase any 4 KWord sector (S0 - S1023).

The Block-Erase architecture is based on block size of 32 KWords. In SST38VF6401 and

SST38VF6402 devices, the Block-Erase command can erase any 32KWord Block (B0-B127). For the

non-uniform boot block devices, SST38VF6403 and SST38VF6404, the Block-Erase command can

erase any 32 KWord block except the block that contains the boot area. In the boot area, Block-Erase

behaves like Sector-Erase, and only erases a 4KWord sector. For the SST38VF6403 device, a Block-

Erase executed on the Boot Block (B0), will result in the device erasing a 4KWord sector in B0 located

at A

-A

. For the SST38VF6404 device, a Block-Erase executed on the Boot Block (B127), will result

in the device erasing a 4KWord sector in B127 located at A

-A

The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase

command (50H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated

by executing a six-byte command sequence with Block-Erase command (30H) and block address (BA)

in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse,

while the command (50H or 30H) is latched on the rising edge of the sixth WE# pulse. The internal

Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined

using either Data# Polling or Toggle Bit methods. The RY/BY# pin can also be used to monitor the

erase operation. For more information, see Figures 14 and 15 for timing waveforms and Figure 29 for

the flowchart.

Any commands, other than Erase-Suspend, issued during the Sector- or Block-Erase operation are

ignored. Any attempt to Sector- or Block-Erase memory inside a block protected by Volatile Block Pro-

tection, Non-Volatile Block Protection, or WP# (low) will be ignored. During the command sequence,

WP# should be statically held high or low.

Erase-Suspend/Erase-Resume Commands

The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing

data to be read or programmed into any sector or block that is not engaged in an Erase operation. The

operation is executed with a one-byte command sequence with Erase-Suspend command (B0H). The

device automatically enters read mode within 20 µs (max) after the Erase-Suspend command had

been issued. Valid data can be read, using a Read or Page Read operation, from any sector or block

that is not being erased. Reading at an address location within Erase-Suspended sectors or blocks will

output DQ

toggling and DQ

at ‘1’. While in Erase-Suspend, a Word-Program or Write-Buffer Pro-

gramming operation is allowed anywhere except the sector or block selected for Erase-Suspend.