Datasheet

 2015 Microchip Technology Inc. DS20005119G-page 45
SST26VF064B / SST26VF064BA
6.1 Power-Up Specifications
All functionalities and DC specifications are specified
for a V
DD
ramp rate of greater than 1V per 100 ms (0V
to 3.0V in less than 300 ms). See Table 6-3 and Figure
6-1 for more information.
When V
DD
drops from the operating voltage to below
the minimum V
DD
threshold at power-down, all opera-
tions are disabled and the device does not respond to
commands. Data corruption may result if a power-down
occurs while a Write-Registers, program, or erase
operation is in progress. See Figure 6-2.
FIGURE 6-1: POWER-UP TIMING DIAGRAM
TABLE 6-3: RECOMMENDED SYSTEM POWER-UP/DOWN TIMINGS
Symbol Parameter Minimum Max Units Condition
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
T
PD
1
Power-down Duration 100 ms
V
OFF
V
DD
off time 0.3 V 0V recommended
Time
V
DD
Min
V
DD
Max
V
DD
Device fully accessible
T
PU-READ
T
PU-WRITE
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
25119 F27.0