Datasheet

SST26VF032B / SST26VF032BA
DS20005218E-page 44  2013-2016 Microchip Technology Inc.
7.0 DC CHARACTERISTICS
TABLE 7-1: DC OPERATING CHARACTERISTICS (V
DD
= 2.3 - 3.6V)
Symbol Parameter
Limits
Test ConditionsMin Typ Max Units
I
DDR1
Read Current 8 15 mA V
DD=
V
DD
Max,
CE#=0.1 V
DD
/0.9 V
DD
@40 MHz,
SO=open
I
DDR2
Read Current 20 mA V
DD
= V
DD
Max,
CE#=0.1 V
DD
/0.9 V
DD
@104 MHz,
SO=open
I
DDW
Program and Erase Cur-
rent
25 mA CE#=V
DD
Max
I
SB
Standby Current 15 45 µA CE#=V
DD
, V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 2µAV
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current 2µAV
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8VV
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
TABLE 7-2: CAPACITANCE (TA = 25°C, F=1 MHZ, OTHER PINS OPEN)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Output Pin Capacitance V
OUT
= 0V8 pF
C
IN
1
Input Capacitance V
IN
= 0V 6 pF
TABLE 7-3: RELIABILITY CHARACTERISTICS
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Endurance 100,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
TABLE 7-4: WRITE TIMING PARAMETERS (V
DD
= 2.3-3.6V)
Symbol Parameter Minimum Maximum Units
T
SE
Sector-Erase 25 ms
T
BE
Block-Erase 25 ms
T
SCE
Chip-Erase 50 ms
T
PP
1
1. Estimate for typical conditions less than 256 bytes: Programming Time (µs) = 55 + (3.75 x # of bytes)
Page-Program 1.5 ms
T
PSID
Program Security-ID 1.5 ms
T
WS
Write-Suspend Latency 25 µs
T
Wpen
Write-Protection Enable Bit Latency 25 ms