Datasheet
Table Of Contents
- Features
- Product Description
- Block Diagram
- Pin Description
- Product Identification
- Memory Organization
- Device Operation
- Electrical Specifications
- Table 7: Operating Range
- Table 8: AC Conditions of Test
- Table 9: DC Operating Characteristics VDD = 2.7-3.6V
- Table 10: Recommended System Power-up Timings
- Table 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
- Table 12: Reliability Characteristics
- Table 13: AC Operating Characteristics VDD = 2.7-3.6V
- Product Ordering Information
- Packaging Diagrams
©2011 Silicon Storage Technology, Inc. S725081A 10/11
12
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A
23
-A
0
]. Following the address, the data is
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T
BP
for the completion of
the internal self-timed Byte-Program operation. See Figure 6 for the Byte-Program sequence.
Figure 6: Byte-Program Sequence
1265 F06.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD. D
IN
02
HIGH IMPEDANCE
15 16
23
24
31
32
39
MODE 0
MODE 3
MSBMSB
MSB
LSB