Datasheet

 2009-2013 Microchip Technology Inc. DS60001156H-page 371
PIC32MX5XX/6XX/7XX
TABLE 31-12: PROGRAM FLASH MEMORY WAIT STATE CHARACTERISTICS
TABLE 31-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
-40°C  T
A  +105°C for V-Temp
Param.
No.
Symbol Characteristics Min. Typical
(1)
Max. Units Conditions
Program Flash Memory
(3)
D130 EP Cell Endurance 1000 — — E/W —
D130a EP Cell Endurance 20,000 — — E/W See Note 4
D131 V
PR VDD for Read 2.3 — 3.6 V —
D132 V
PEW VDD for Erase or Write 3.0 — 3.6 V —
D132a V
PEW VDD for Erase or Write 2.3 — 3.6 V See Note 4
D134 T
RETD Characteristic Retention 20 — — Year Provided no other specifications
are violated
D135 IDDP Supply Current during
Programming
—10—mA —
T
WW Word Write Cycle Time 20 — 40 s—
D136 TRW Row Write Cycle Time
(2)
34.5—ms —
D137 T
PE Page Erase Cycle Time 20 — — ms —
T
CE Chip Erase Cycle Time 80 — — ms —
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus loads
are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The default
Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to “PIC32 Flash Programming Specification” (DS60001145) for operating conditions during
programming and erase cycles.
4: This parameter only applies to PIC32MX534/564/664/764 devices.
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
-40°C  T
A  +105°C for V-Temp
Required Flash Wait States SYSCLK Units Comments
0 Wait State 0 to 30 MHz —
1 Wait State 31 to 60
2 Wait States 61 to 80