Datasheet

 2011-2012 Microchip Technology Inc. Preliminary DS61168E-page 251
PIC32MX1XX/2XX
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
-40°C  TA  +105°C for V-temp
Param.
No.
Symbol Characteristics Min. Typical
(1)
Max. Units Conditions
Program Flash Memory
(3)
D130 EP Cell Endurance 20,000 — — E/W —
D131 VPR VDD for Read 2.3 — 3.6 V —
D132 V
PEW VDD for Erase or Write 2.3 — 3.6 V —
D134 T
RETD Characteristic Retention 20 — — Year Provided no other specifications
are violated
D135 IDDP Supply Current during
Programming
—10 —mA —
T
WW Word Write Cycle Time — 411 —
FRC Cycles
See Note 4
D136 T
RW Row Write Cycle Time — 6675 — See Note 2,4
D137 T
PE Page Erase Cycle Time — 20011 — See Note 4
TCE Chip Erase Cycle Time — 80180 — See Note 4
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus
loads are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The
default Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to the “PIC32 Flash Programming Specification” (DS61145) for operating conditions during
programming and erase cycles.
4: This parameter depends on FRC accuracy (See Table 29-17) and FRC tuning values (See Register 8-2).