Datasheet
PIC24FJ256DA210 FAMILY
DS39969B-page 378 2010 Microchip Technology Inc.
TABLE 30-8: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 2.2V to 3.6V (unless otherwise stated)
Operating temperature -40°C T
A +85°C for Industrial
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
V
OL Output Low Voltage
DO10 I/O Ports — — 0.4 V IOL = 6.6 mA, VDD = 3.6V
——0.4VI
OL = 5.0 mA, VDD = 2.2V
DO16 OSCO/CLKO — — 0.4 V IOL = 6.6 mA, VDD = 3.6V
——0.4VIOL = 5.0 mA, VDD = 2.2V
V
OH Output High Voltage
DO20 I/O Ports 3.0 — — V IOH = -3.0 mA, VDD = 3.6V
2.4 — — V IOH = -6.0 mA, VDD = 3.6V
1.65 — — V I
OH = -1.0 mA, VDD = 2.2V
1.4 — — V I
OH = -3.0 mA, VDD = 2.2V
DO26 OSCO/CLKO 2.4 — — V IOH = -6.0 mA, VDD = 3.6V
1.4 — — V I
OH = -1.0 mA, VDD = 2.2V
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. Parameters are for design guidance only
and are not tested.
TABLE 30-9: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.2V to 3.6V (unless otherwise
stated)
Operating temperature -40°C T
A +85°C for Industrial
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10000 — — E/W -40C to +85C
D131 VPR VDD for Read VMIN —3.6 VVMIN = Minimum operating voltage
D132B V
DD for Self-Timed Write VMIN —3.6 VVMIN = Minimum operating voltage
D133A TIW Self-Timed Word Write
Cycle Time
—20—s
Self-Timed Row Write
Cycle Time
—1.5—ms
D133B TIE Self-Timed Page Erase
Time
20 — 40 ms
D134 T
RETD Characteristic Retention 20 — — Year If no other specifications are
violated
D135 I
DDP Supply Current during
Programming
—16—mA
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.