Datasheet

 2005-2012 Microchip Technology Inc. DS39747F-page 225
PIC24FJ128GA010 FAMILY
TABLE 27-12: INTERNAL VOLTAGE REGULATOR SPECIFICATIONS
TABLE 27-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 2.0V to 3.6V (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 100 1K — E/W -40C to +85C
D131 V
PR VDD for Read VMIN —3.6VVMIN = Minimum operating
voltage
D132B V
PEW VDD for Self-Timed
Erase/Write
2.25 — 3.6 V
D133A T
IW Self-Timed Write Cycle Time — 3 — ms
D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications
are violated
D135 I
DDP Supply Current During
Programming
—10 —mA
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
Operating Conditions: -40°C < T
A < +85°C (unless otherwise stated)
Param
No.
Sym Characteristics Min Typ Max Units Comments
V
RGOUT Regulator Output Voltage — 2.5 — V
CEFC External Filter Capacitor Value 4.7 10 — F Series resistance < 3 Ohm recommended;
< 5 Ohm required.
T
VREG Voltage Regulator Start-up Time — 500 — s ENVREG = VDD
TPWRT Power-up Timer Period — 64 — ms ENVREG = VSS
TBG Band Gap Reference Start-up Time — — 1 ms