Datasheet

 2011-2013 Microchip Technology Inc. DS30001037C-page 51
PIC24F16KL402 FAMILY
EXAMPLE 5-2: ERASING A PROGRAM MEMORY ROW – ‘C’ LANGUAGE CODE
EXAMPLE 5-3: LOADING THE WRITE BUFFERS – ASSEMBLY LANGUAGE CODE
// C example using MPLAB C30
int __attribute__ ((space(auto_psv))) progAddr = &progAddr; // Global variable located in Pgm Memory
unsigned int offset;
//Set up pointer to the first memory location to be written
TBLPAG = __builtin_tblpage(&progAddr); // Initialize PM Page Boundary SFR
offset = &progAddr & 0xFFFF; // Initialize lower word of address
__builtin_tblwtl(offset, 0x0000); // Set base address of erase block
// with dummy latch write
NVMCON = 0x4058; // Initialize NVMCON
asm("DISI #5"); // Block all interrupts for next 5
// instructions
__builtin_write_NVM(); // C30 function to perform unlock
// sequence and set WR
; Set up NVMCON for row programming operations
MOV #0x4004, W0 ;
MOV W0, NVMCON ; Initialize NVMCON
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
MOV #0x0000, W0 ;
MOV W0, TBLPAG ; Initialize PM Page Boundary SFR
MOV #0x6000, W0 ; An example program memory address
; Perform the TBLWT instructions to write the latches
; 0th_program_word
MOV #LOW_WORD_0, W2 ;
MOV #HIGH_BYTE_0, W3 ;
TBLWTL W2, [W0] ; Write PM low word into program latch
TBLWTH W3, [W0++] ; Write PM high byte into program latch
; 1st_program_word
MOV #LOW_WORD_1, W2 ;
MOV #HIGH_BYTE_1, W3 ;
TBLWTL W2, [W0] ; Write PM low word into program latch
TBLWTH W3, [W0++] ; Write PM high byte into program latch
; 2nd_program_word
MOV #LOW_WORD_2, W2 ;
MOV #HIGH_BYTE_2, W3 ;
TBLWTL W2,
[W0] ; Write PM low word into program latch
TBLWTH W3,
[W0++] ; Write PM high byte into program latch
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; 32nd_program_word
MOV #LOW_WORD_31, W2 ;
MOV #HIGH_BYTE_31, W3 ;
TBLWTL W2,
[W0] ; Write PM low word into program latch
TBLWTH W3,
[W0] ; Write PM high byte into program latch