Datasheet

 2008-2011 Microchip Technology Inc. DS39927C-page 229
PIC24F16KA102 FAMILY
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial
-40°C  T
A  +125°C for Extended
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
D130 EP Cell Endurance 10,000
(2)
——E/W
D131 VPR VDD for Read VMIN —3.6VVMIN = Minimum operating voltage
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are
violated
D135 I
DDP Supply Current During
Programming
—10—mA
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
2: Self-write and block erase.
TABLE 29-12: DC CHARACTERISTICS: DATA EEPROM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial
-40°C  T
A  +125°C for Extended
Param
No.
Sym Characteristic Min Typ
(1)
Max Units Conditions
Data EEPROM Memory
D140 EPD Cell Endurance 100,000 — — E/W
D141 V
PRD VDD for Read VMIN —3.6VVMIN = Minimum operating voltage
D143A TIWD Self-Timed Write Cycle
Time
—4 —ms
D143B T
REF Number of Total Write/Erase
Cycles Before Refresh
— 10M — E/W
D144 T
RETDD Characteristic Retention 40 — — Year Provided no other specifications are
violated
D145 I
DDPD Supply Current During
Programming
—7 —mA
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.