Datasheet

Table Of Contents
PIC18F87J72 FAMILY
DS39979A-page 402 Preliminary 2010 Microchip Technology Inc.
TABLE 29-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10K E/W -40C to +85C
D131 VPR VDD for Read VMIN —3.6VVMIN = Minimum operating
voltage
D132B V
PEW Voltage for Self-Timed Erase or
Write operations
VDD
VDDCORE
2.35
2.25
3.6
2.7
V
V
ENVREG tied to VDD
ENVREG tied to VSS
D133A TIW Self-Timed Write Cycle Time 2.8 ms
D133B T
IE Self-Timed Block Erased Cycle
Time
—33—ms
D134 T
RETD Characteristic Retention 20 Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—314mA
D140 T
WE Writes per Erase Cycle 1 For each physical address
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.