Datasheet

PIC18F87J10 FAMILY
DS39663F-page 360 © 2009 Microchip Technology Inc.
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 100 1K — E/W -40°C to +85°C
D131 VPR VDD for Read VMIN —3.6VVMIN = Minimum operating
voltage
D132 V
PEW Voltage for Self-Timed Erase or
Write
V
DD 2.35 — 3.6 V ENVREG = 0
VDDCORE 2.25 — 2.7 V ENVREG = 1
D133A TIW Self-Timed Write Cycle Time — 2.8 — ms
D133B T
IE Self-Timed Page Erase Cycle
Time
—33.0—ms
D134 T
RETD Characteristic Retention 20 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—10—mA
D140 T
WE Writes per Erase Cycle — — 1 For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.