Datasheet

PIC18F85J90 FAMILY
DS39770C-page 372  2010 Microchip Technology Inc.
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
TABLE 26-2: COMPARATOR SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 100 1K — E/W -40C to +85C
D131 VPR VDD for Read VMIN —3.6VVMIN = Minimum operating
voltage
D132 V
PEW Voltage for Self-Timed Erase or
Write:
V
DD 2.35 — 3.6 V ENVREG tied to VDD
VDDCORE 2.25 — 2.7 V ENVREG tied to VSS
D133A TIW Self-Timed Write Cycle Time — 2.8 — ms
D133B T
IE Self-Timed Block Erased Cycle
Time
—33—ms
D134 T
RETD Characteristic Retention 20 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—3 7mA
D1xxx T
WE Writes per Erase Cycle — — 1 Per one physical word
address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Operating Conditions: 3.0V  V
DD  3.6V, -40°C  TA  +85°C (unless otherwise stated)
Param
No.
Sym Characteristics Min Typ Max Units Comments
D300 V
IOFF Input Offset Voltage — ±5.0 ±25 mV
D301 VICM Input Common Mode Voltage 0 — AVDD – 1.5 V
D302 CMRR Common Mode Rejection Ratio 55 — — dB
D303 T
RESP Response Time
(1)
— 150 400 ns
D304 TMC2OV Comparator Mode Change to
Output Valid*
—— 10 s
D305 V
IRV Internal Reference Voltage — 1.2 — V
Note 1: Response time measured with one comparator input at (AVDD – 1.5)/2, while the other input transitions
from V
SS to VDD.