Datasheet

 2003-2013 Microchip Technology Inc. DS39609C-page 317
PIC18F6520/8520/6620/8620/6720/8720
TABLE 26-4: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(Note 1)
D110 V
PP Voltage on MCLR/VPP pin 9.00 — 13.25 V (Note 2)
D112 IPP Current into MCLR/VPP pin — — 5 A
D113 I
DDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D120 E
D Cell Endurance 100K 1M — E/W -40C to +85C
D120A E
D Cell Endurance 10K 100K — E/W +85C to +125C
D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year -40C to +85C (Note 3)
D123A TRETD Characteristic Retention 100 — — Year 25C (Note 3)
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40C to +85C
D130A EP Cell Endurance 1000 10K — E/W +85C to +125C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5 — 5.5 V Using ICSP port
D132A VIW VDD for Externally Timed Erase
or Write
4.5 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE ICSP Block Erase Cycle Time — 5 — ms VDD > 4.5V
D133A T
IW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD > 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2.5 — ms
D134 TRETD Characteristic Retention 40 — — Year -40C to +85C (Note 3)
D134A T
RETD Characteristic Retention 100 — — Year 25C (Note 3)
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: The pin may be kept in this range at times other than programming, but it is not recommended.
3: Retention time is valid, provided no other specifications are violated.