Datasheet

PIC18F6390/6490/8390/8490
DS39629C-page 364 © 2007 Microchip Technology Inc.
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D110 V
PP Voltage on MCLR/VPP pin 10.0 — 12.0 V
D113 IDDP Supply Current during
Programming
—— 1mA
D130 E
P Cell Endurance — 1K — E/W -40°C to +85°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 2.75 — 5.5 V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase
or Write
2.75 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE ICSP Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
2——msVDD > 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.