Datasheet

 2010 Microchip Technology Inc. DS39635C-page 365
PIC18F6310/6410/8310/8410
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  T
A  +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D110 V
PP Voltage on MCLR/VPP pin 10.0 — 12.0 V
D113 I
DDP Supply Current during
Programming
—— 1mA
D130 E
P Cell Endurance — 1K — E/W -40C to +85C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 2.75 — 5.5 V Using ICSP port
D132A V
IW VDD for Externally Timed Erase
or Write
2.75 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE ICSP™ Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
2——msVDD > 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.