Datasheet

PIC18F46J50 FAMILY
DS39931D-page 504  2011 Microchip Technology Inc.
TABLE 30-1: MEMORY PROGRAMMING REQUIREMENTS
TABLE 30-2: COMPARATOR SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10K — — E/W -40C to +85C
D131 VPR VDDcore for Read VMIN —2.75VVMIN = Minimum operating
voltage
D132B V
PEW VDDCORE for Self-Timed Erase or
Write
2.25 — 2.75 V
D133A T
IW Self-Timed Write Cycle Time — 2.8 — ms 64 bytes
D133B TIE Self-Timed Block Erase Cycle
Time
—33.0—ms
D134 T
RETD Characteristic Retention 20 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—3—mA
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
Operating Conditions: 3.0V < VDD < 3.6V, -40°C < TA < +85°C (unless otherwise stated)
Param
No.
Sym Characteristics Min Typ Max Units Comments
D300 V
IOFF Input Offset Voltage — +/-5 +/-25 mV
D301 VICM Input Common Mode Voltage 0 — VDD V
V
IRV Internal Reference Voltage 0.57 0.60 0.63 V
D302 CMRR Common Mode Rejection Ratio 55 — — dB
D303 TRESP Response Time
(1)
—150400 ns
D304 T
MC2OV Comparator Mode Change to
Output Valid
—— 10 s
Note 1: Response time measured with one comparator input at V
DD/2, while the other input transitions from VSS to
V
DD.