Datasheet

© 2008 Microchip Technology Inc. DS39626E-page 337
PIC18F2525/2620/4525/4620
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Data EEPROM Memory
D120 ED Byte Endurance 100K 1M — E/W -40°C to +85°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 TRETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
1M 10M — E/W -40°C to +85°C
D125 I
DDP Supply Current during
Programming
—10—mA
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C to +85°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE
VDD for Block Erase
3.0 — 5.5 V
Using ICSP™ port, +25°C
D132A V
IW VDD for Externally Timed Erase
or Write
4.5 — 5.5 V Using ICSP™ port, +25°C
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE
ICSP Block Erase Cycle Time
—4—ms
V
DD ≥ 4.5V
D133A TIW
ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD ≥ 4.5V, +25°C
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—10—mA
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 6.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.