Datasheet

© 2009 Microchip Technology Inc. DS39682E-page 315
PIC18F45J10 FAMILY
TABLE 24-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 100 1K — E/W -40°C to +85°C
D131 V
PR VDD for Read VMIN —3.6VVMIN = Minimum operating
voltage
D132B V
PEW Voltage for Self-Timed Erase or
Write:
V
DD 2.7 — 3.6 V PIC18FXXJ10
VDDCORE 2.25 — 2.7 V PIC18LFXXJ10
D133A T
IW Self-Timed Write Cycle Time — 2.8 — ms
D133B T
IE Self-Timed Page Erased Cycle
Time
—33.0—ms
D134 T
RETD Characteristic Retention 20 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—10—mA
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.