Datasheet

PIC18F2585/2680/4585/4680
DS39625C-page 428 Preliminary © 2007 Microchip Technology Inc.
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110
V
PP Voltage on MCLR/VPP/RE3 pin 9.00 — 13.25 V (Note 3)
D113 IDDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M — E/W -40°C to +85°C
D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C to +85°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5 — 5.5 V Using ICSP™ port
D132A V
IW VDD for Externally Timed Erase
or Write
4.5 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE ICSP Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD > 4.5V
D133A T
IW Self-timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.