Datasheet

© 2009 Microchip Technology Inc. DS39632E-page 381
PIC18F2455/2550/4455/4550
TABLE 28-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110
V
IHH Voltage on MCLR/VPP/RE3 pin 9.00 — 13.25 V (Note 3)
D113 IDDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M — E/W -40°C to +85°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Bulk Erase 3.2
(4)
— 5.5 V Using ICSP™ port only
D132A VIW VDD for All Erase/Write
Operations (except bulk erase)
VMIN — 5.5 V Using ICSP port or
self-erase/write
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.
4: Minimum voltage is 3.2V for PIC18LF devices in the family. Minimum voltage is 4.2V for PIC18F devices in
the family.