Datasheet

PIC18FXX2
DS39564C-page 268 © 2006 Microchip Technology Inc.
TABLE 22-2: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
D110 VPP
Voltage on MCLR/VPP pin
9.00 — 13.25 V
D113 I
DDP
Supply Current during
Programming
——10mA
Data EEPROM Memory
D120 E
D Cell Endurance 100K
1M —
E/W -40°C to +85°C
D121 V
DRW VDD for Read/Write VMIN
—
5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
1M 10M — E/W -40°C to +85°C
Program FLASH Memory
D130 E
P Cell Endurance 10K 100K
—
E/W -40°C to +85°C
D131 VPR VDD for Read VMIN
—
5.5 V VMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5
—
5.5 V Using ICSP port
D132A VIW VDD for Externally Timed Erase
or Write
4.5
—
5.5 V Using ICSP port
D132B V
PEW VDD for Self-timed Write VMIN
—
5.5 V VMIN = Minimum operating
voltage
D133 T
IE ICSP Block Erase Cycle Time
—
4
—
ms VDD ≥ 4.5V
D133A T
IW ICSP Erase or Write Cycle Time
(externally timed)
1
——
ms VDD ≥ 4.5V
D133A T
IW Self-timed Write Cycle Time
—
2
—
ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.