Datasheet
2010 Microchip Technology Inc. DS39616D-page 341
PIC18F2331/2431/4331/4431
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C T
A +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110 VPP Voltage on MCLR/VPP pin 9.00 — 13.25 V (Note 3)
D112 I
PP Current into MCLR/VPP pin — — 300 A
D113 I
DDP Supply Current during
Programming
—— 1mA
Data EEPROM Memory
D120 E
D Byte Endurance 100K 1M
—
E/W -40C to +85C
D121 VDRW VDD for Read/Write VMIN
—
5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention 40 —
—
Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M
—
E/W -40°C to +85°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K
—
E/W -40C to +85C
D131 VPR VDD for Read VMIN
—
5.5 V VMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5
—
5.5 V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase
or Write
4.5
—
5.5 V Using ICSP port
D132B V
PEW VDD for Self-Timed Write VMIN
—
5.5 V VMIN = Minimum operating
voltage
D133 T
IE ICSP™ Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD > 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.9 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.