Datasheet

PIC18F47J13 FAMILY
DS39974A-page 502 Preliminary  2010 Microchip Technology Inc.
TABLE 30-1: MEMORY PROGRAMMING REQUIREMENTS
30.4 DC Characteristics: PIC18F47J13 Family (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
A  +85°C for industrial
Param
No.
Symbol Characteristic Typ Max Units Conditions
I
IL Input Leakage Current
(1,2)
D060 I/O Ports without 5.5V Tolerance ±5 ±200 nA V
SS VPIN VDD,
Pin at high-impedance
I/O Ports with 5.5V Tolerance ±5 ±200 nA V
SS VPIN 5.5V,
Pin at high-impedance
D061 MCLR
±5 ±200 nA Vss VPIN VDD
D063 OSC1 ±5 ±200 nA Vss VPIN VDD
Note 1: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified
levels represent normal operating conditions. Higher leakage current may be measured at different input
voltages.
2: Negative current is defined as current sourced by the pin.
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10K — — E/W -40C to +85C
D131 VPR VDDcore for Read VMIN —2.75VVMIN = Minimum operating
voltage
D132B V
PEW VDDCORE for Self-Timed Erase or
Write
2.25 — 2.75 V
D133A T
IW Self-Timed Write Cycle Time — 2.8 — ms 64 bytes
D133B T
IE Self-Timed Block Erase Cycle
Time
—33.0—ms
D134 T
RETD Characteristic Retention 20 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—3—mA
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.