Datasheet

© 2006 Microchip Technology Inc. DS41159E-page 61
PIC18FXX8
5.3 Reading the Data EEPROM
Memory
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD and
CFGS control bits (EECON1<7:6>) and then set
control bit RD
(EECON1<0>). The data is available in
the very next instruction cycle of the EEDATA register;
therefore, it can be read by the next instruction.
EEDATA will hold this value until another read
operation or until it is written to by the user (during a
write operation).
EXAMPLE 5-1: DATA EEPROM READ
5.4 Writing to the Data EEPROM
Memory
To write an EEPROM data location, the address must
first be written to the EEADR register and the data writ-
ten to the EEDATA register. Then, the sequence in
Example 5-2 must be followed to initiate the write cycle.
The write will not initiate if the above sequence is not
exactly followed (write 55h to EECON2, write 0AAh to
EECON2, then set WR
bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect the current write cycle. The WR
bit will be inhibited from being set unless the WREN bit
is set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR
bit is
cleared in hardware and the EEPROM Write Complete
Interrupt Flag bit (EEIF) is set. The user may either
enable this interrupt or roll this bit. EEIF must be
cleared by software.
EXAMPLE 5-2: DATA EEPROM WRITE
MOVLW DATA_EE_ADDR ;
MOVWF EEADR ;Data Memory Address
;to read
BCF EECON1, EEPGD ;Point to DATA memory
BCS EECON1, CFGS ;
BSF EECON1, RD ;EEPROM Read
MOVF EEDATA, W ;W = EEDATA
MOVLW DATA_EE_ADDR ;
MOVWF EEADR ; Data Memory Address to read
MOVLW DATA_EE_DATA ;
MOVWF EEDATA ; Data Memory Value to write
BCF EECON1, EEPGD ; Point to DATA memory
BCF EECON1, CFGS ; Access program FLASH or Data EEPROM memory
BSF EECON1, WREN ; Enable writes
BCF INTCON, GIE ; Disable interrupts
Required MOVLW 55h ;
Sequence MOVWF EECON2 ; Write 55h
MOVLW 0AAh ;
MOVWF EECON2 ; Write AAh
BSF EECON1, WR ; Set WR bit to begin write
BSF INTCON, GIE ; Enable interrupts
. ; user code execution
.
.
BCF EECON1, WREN ; Disable writes on write complete (EEIF set)