Datasheet

© 2006 Microchip Technology Inc. DS41159E-page 339
PIC18FXX8
TABLE 27-2: DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
DC Characteristics Standard Operating Conditions
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
D110 V
PP Voltage on MCLR/VPP pin 9.00 — 13.25 V
D113 IDDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D120 E
D Cell Endurance 100K 1M — E/W -40°C to +85°C
D120A ED Byte Endurance 10K 100K — E/W +85°C to +125°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating voltage
D122 TDEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
D124 T
REF Number of Total Erase/Write
Cycles to Data EEPROM before
Refresh*
1M 10M — Cycles -40°C to +85°C
D124A TREF Number of Total Erase/Write
Cycles before Refresh*
100K 1M — Cycles +85°C to +125°C
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C to +85°C
D130A E
P Cell Endurance 1000 10K — E/W +85°C to +125°C
D131 VPR VDD for Read VMIN —5.5VVMIN = Minimum operating voltage
D132 VIE VDD for Block Erase 4.5 — 5.5 V Using ICSP™ port
D132A V
IW VDD for Externally Timed Erase
or Write
4.5 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating voltage
D133 T
IE ICSP Erase Cycle Time — 4 — ms VDD ≥ 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD ≥ 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
* See Section 5.8 “Using the Data EEPROM” for more information.