Datasheet

PIC18F2X1X/4X1X
DS39636D-page 328 © 2009 Microchip Technology Inc.
TABLE 25-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110 VPP Voltage on MCLR/VPP/RE3 pin VDD + 4 — 12.5 V (Note 2)
D113 IDDP Supply Current during
Programming
—10—mA
Program Flash Memory
D130 E
P Cell Endurance 10K 100K
—
E/W -40°C to +85°C
D131 V
PR VDD for Read VMIN
—
5.5 V VMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5
—
5.5 V Using ICSP™ port
D132A V
IW VDD for Externally Timed Erase
or Write
4.5
—
5.5 V Using ICSP port
D133 T
IE ICSP Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A T
IW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD > 4.5V
D134 T
RETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Required only if Single-Supply programming is disabled.