Datasheet

 2010-2012 Microchip Technology Inc. DS41412F-page 443
PIC18(L)F2X/4XK22
27.9 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D170
VPP Voltage on MCLR/VPPpin 8 — 9 V (Note 3), (Note 4)
D171
I
DDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D172
E
D Byte Endurance 100K — — E/W -40C to +85C
D173
V
DRW VDD for Read/Write
VDDMIN
—
VDDMAX
V Using EECON to read/
write
D175
T
DEW Erase/Write Cycle Time — 3 4 ms
D176
T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D177
T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D178
E
P Cell Endurance 10K — — E/W -40C to +85C (Note 5)
D179
V
PR VDD for Read
VDDMIN
—
VDDMAX
V
D181
V
IW VDD for Row Erase or Write 2.2 —
VDDMAX
V PIC18LF2X/4XK22
D182
V
IW
VDDMIN
—
VDDMAX
V PIC18F2X/4XK22
D183
T
IW Self-timed Write Cycle Time — 2 — ms
D184
T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable V
PP output. Circuitry to limit the MPLAB ICD 2 VPP voltage must
be placed between theMPLAB ICD 2 and target system when programming or debugging with the MPLAB
ICD 2.
5: Self-write and Block Erase.