Datasheet

© 2009 Microchip Technology Inc. DS39689F-page 349
PIC18F2221/2321/4221/4321 FAMILY
TABLE 27-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Data EEPROM Memory
D120 E
D Byte Endurance 1M 10M — E/W -40°C to +85°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write,
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 TRETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
100K 1M — E/W -40°C to +85°C
D125 I
DDP Supply Current during
Programming
—10—mA
Program Flash Memory
D130 E
P Cell Endurance 10K 100K — E/W -40°C to +85°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 3.0 — 5.5 V Using ICSP™ port, 25°C
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 T
RETD Characteristic Retention 40 100 — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
—10—mA
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 8.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.