Datasheet

© 2007 Microchip Technology Inc. DS39599G-page 321
PIC18F2220/2320/4220/4320
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ T
A ≤ +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
D110 V
PP Voltage on MCLR/VPP pin 9.00 — 13.25 V (Note 2)
D112 I
PP Current into MCLR/VPP pin — — 300 μA
D113 I
DDP Supply Current during
Programming
——1.0mA
Data EEPROM Memory
D120 E
D Byte Endurance 100K
10K
1M
100K
—
—
E/W
E/W
-40°C to +85°C
-40°C to +125°C
D121 V
DRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write
V
MIN = Minimum operating
voltage
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(1)
1M
100K
10M
1M
—
—
E/W
E/W
-40°C to +85°C
-40°C to +125°C
Program Flash Memory
D130 E
P Cell Endurance 10K
1K
100K
10K
—
—
E/W
E/W
-40°C to +85°C
-40°C to +125°C
D131 V
PR VDD for Read VMIN —5.5VVMIN = Minimum operating
voltage
D132 V
IE VDD for Block Erase 4.5 — 5.5 V Using ICSP port
D132A VIW VDD for Externally Timed Erase
or Write
4.5 — 5.5 V Using ICSP port
D132B V
PEW VDD for Self-Timed Write VMIN —5.5VVMIN = Minimum operating
voltage
D133 T
IE ICSP Block Erase Cycle Time — 4 — ms VDD > 4.5V
D133A T
IW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD > 4.5V
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
2: Required only if Low-Voltage Programming is disabled.