Datasheet
2010 Microchip Technology Inc. Preliminary DS41350E-page 375
PIC18F/LF1XK50
Capacitive Loading Specs on Output Pins
D101* COSC2 OSC2 pin — — 15 pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A* C
IO All I/O pins — — 50 pF
Flash Memory
D130 E
P Cell Endurance 10K
100K
— — E/W Program Flash Memory
Data Flash Memory
D131 V
DD for Read VMIN ——V
Voltage on MCLR
/VPP during
Erase/Program
8.0 — 9.0 V
Temperature during programming:
-40°C T
A 85°C
V
DD for Bulk Erase 2.7 — VDD Max V Temperature during programming:
10°C T
A 40°C
D132 V
PEW VDD for Write or Row Erase VDD Min — VDD Max V VMIN = Minimum operating voltage
V
MAX = Maximum operating
voltage
I
PPPGM Current on MCLR/VPP during
Erase/Write
——1.0mA
I
DDPGM Current on VDD during
Erase/Write
—
5.0 mA
D133 T
PEW Erase/Write cycle time — 4.0 5.0 ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other specifications
are violated
VUSB Capacitor Charging
D135 Charging current — 200 —
A
D135A Source/sink capability when
charging complete
—0.0—mA
27.4 DC Characteristics: PIC18F/LF1XK50-I/E (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +85°C for industrial
-40°C T
A +125°C for extended
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
* These parameters are characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR
pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
4: Including OSC2 in CLKOUT mode.