Datasheet

 2009-2011 Microchip Technology Inc. DS41365E-page 343
PIC18(L)F1XK22
25.10 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
A  +125°C
Param
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110
V
PP Voltage on MCLR/VPP/RA3 pin 8 — 9 V (Note 3, Note 4)
D113 I
DDP Supply Current during Programming — — 10 mA
Data EEPROM Memory
(2)
D120 ED Byte Endurance 100K — — E/W -40C to +85C
D121 V
DRW VDD for Read/Write VDDMIN —VDDMAX V Using EECON to read/write
D122 T
DEW Erase/Write Cycle Time — 3 4 ms
D123 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write Cycles
before Refresh
(2)
1M 10M — E/W -40°C to +85°C
D130 Program Flash Memory
E
P Cell Endurance 10k — — E/W Temperature during program-
ming: 10°C  T
A  40°C
D131 V
PR VDD for Read VDDMIN —VDDMAX V
D131A Voltage on MCLR
/VPP during
Erase/Program
8.0 — 9.0 V
Temperature during program-
ming: 10°C  T
A  40°C
D131B V
BE VDD for Bulk Erase 2.7 — VDDMAX V Temperature during program-
ming: 10°C  T
A  40°C
D132 V
PEW VDD for Write or Row Erase 2.2
V
DDMIN
—
—
VDDMAX
VDDMAX
V PIC18LF1XK22
PIC18F1XK22
D132A I
PPPGM Current on MCLR/VPP during
Erase/Write
—1.0—mA
Temperature during program-
ming: 10°C  T
A  40°C
D132B I
DDPGM Current on VDD during Erase/Write —
5.0 — mA
Temperature during program-
ming: 10°C  T
A  40°C
D133 T
PEW Erase/Write cycle time — 2.0 2.8 ms Temperature during program-
ming: 10°C  T
A  40°C
D134 T
RETD Characteristic Retention — 40 — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write instructions.
2: Refer to Section 5.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable V
PP output. Circuitry to limit the ICD 2 VPP voltage must be placed
between the ICD 2 and target system when programming or debugging with the ICD 2.